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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
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HAT2140H
Silicon N Channel Power MOS FET Power Switching
ADE-208-1581B(Z) Preliminary 3rd. Edition Aug. 2002 Features
* Capable of 7 V gate drive * Low drive current * High density mounting * Low on-resistance RDS(on) = 12.5 m typ. (at VGS = 10 V)
Outline
LFPAK
5
5 D
3 12
4
4 G
1, 2, 3 Source 4 Gate 5 Drain
SSS 123
HAT2140H
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP
Note 3 Note 3 Note2 Note1
Ratings 100 20 25 100 25 25 62.5 30 150 -55 to + 150
Unit V V A A A A mJ W C C
EAR
Pch Tch
Tstg
Notes: 1. PW 10 s, duty cycle 1% 2. Tc=25C 3. Value at Tch = 25C, Rg 50
Rev.2, Aug. 2002, page 2 of 5
HAT2140H
Electrical Characteristics
(Ta = 25C)
Item Symbol Min 100 20 -- -- 2.0 -- -- 27 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 12.5 13.5 45 6500 480 210 105 20 22 25 24 100 12 0.83 55 Max -- -- 10 1 3.5 16.0 18.0 -- -- -- -- -- -- -- -- -- -- -- 1.08 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 12.5 A, VGS = 10 V ID = 12.5 A, VGS = 7 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 25 A VGS = 10 V, ID = 12.5 A VDD 30 V RL = 2.4 Rg = 4.7 IF = 25 A, VGS = 0
Note4 Note4 Note4 Note4
Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF
ID = 12.5 A, VDS = 10 V
Body-drain diode reverse recovery trr time Notes: 4. Pulse test
IF = 25 A, VGS = 0 diF/ dt = 100 A/ s
Rev.2, Aug. 2002, page 3 of 5
HAT2140H
Package Dimensions
As of January, 2002
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
0.20 -0.03
+0.05
Hitachi Code JEDEC JEITA Mass (reference value)
LFPAK -- -- 0.080 g
Rev.2, Aug. 2002, page 4 of 5
4.2
HAT2140H
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk
Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.2, Aug. 2002, page 5 of 5

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